Volume distributions of InAs/GaAs self-assembled quantum dots by Stranski–Krastanow mode

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We studied the volume distributions of dislocation-free InAs/GaAs self-assembled quantum dots obtained by Stranski–Krastanow mode of molecular beam epitaxy, with and without in situ annealing. The same scaling function was obtained over a wide range of dot densities. The scaling function indicated that the cluster size fluctuation normalized by the average size is constant for all the quantum dot densities we studied. The resemblance of the scaling function to that of the submonolayer homoepitaxial growth implies that the strain is not the essential factor determining the cluster size distribution of quantum dots.