Volume dependence of AlH3 band gap at high pressures

Abstract

The volume dependence of the band gap for aluminum hydride (alane) is compared at high static and dynamic pressures. Room temperature high pressure isotherm data and multiple-shock conductivity data were used for the reconstruction of the volume dependence of the alane band gap in the pressure range 50–75 GPa. The traditional exponential relationship for the temperature dependence of semiconductor conductivity with the power law volume dependence of the aluminum hydride band gap is suggested in the regions of volumes 11.5–12.5 cm3/mol, pressures 50–75 GPa and temperatures 1270–1370 K.