Abstract
Sandwich structures of Cu/(SiOTiO)/Cu where the thickness of the coevaporated insulator is in the range 2000–13 000 Å were investigated. Electroformed devices show voltage-controlled negative resistance, electron emission, pressure-voltage memory and thermal-voltage memory effects. The effects of an increase in pressure or a decrease in temperature on the electrical behaviour of a formed sample are similar in form. The results can be interpreted in terms of the filamentary model of electrical conduction as proposed by Dearnaley, Morgan and Stoneham.
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