Abstract
Electrical conduction in Cu-SiO/TiO-Cu thin film structures has been investigated. Prior to electroforming, the d.c. conduction showed a behaviour of the form log lc∞(Vb)1/2 where lc is the circulating current and Vb is the applied voltage. At low applied voltages the a.c. conductivity obeyed the relation σAC∞fn (n=0.82 at 209 K). After electroforming, the samples showed voltage controlled negative resistance (VCNR), electron emission and voltage memory effects which can be explained in terms of a filamentary model.
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