Abstract
In this paper, we report a mid-wave infrared (MWIR) and long-wave infrared (LWIR) dual-band photodetector capable of voltage-controllable detection band selection. The voltage-tunable dual-band photodetector is based on the multiple stacks of sub-monolayer (SML) quantum dots (QDs) and self-assembled QDs. By changing the photodetector bias voltages, one can set the detection band to be MWIR, or LWIR or both with high photodetectivity and low crosstalk between the bands.
Highlights
Due to their importance in numerous civilian and defense applications, dual-band photodetectors covering the mid-wave infrared (MWIR) (3–5 μm) and long-wave infrared (LWIR) (8–12 μm) bands have been extensively researched in the past decades [1,2]
quantum dots (QDs) based MWIR and LWIR dual-band photodetectors have been reported by several research groups [10,11,12] using different techniques including tailoring the sizes of the QDs during the material growth capping the QDs with different capping layers [12], and inserting asymmetric barrier layers [13]
We report aa dual-band dual-band MWIR and LWIR photodetector photodetector based on the multiple stacks of
Summary
Due to their importance in numerous civilian and defense applications, dual-band photodetectors covering the mid-wave infrared (MWIR) (3–5 μm) and long-wave infrared (LWIR) (8–12 μm) bands have been extensively researched in the past decades [1,2]. QD based MWIR and LWIR dual-band photodetectors have been reported by several research groups [10,11,12] using different techniques including tailoring the sizes of the QDs during the material growth capping the QDs with different capping layers [12], and inserting asymmetric barrier layers [13]. We report aa dual-band dual-band MWIR and LWIR photodetector photodetector based on the multiple stacks of QDs and self-assembled.
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