Abstract
Boundary conditions similar to the Fletcher boundary conditions have been obtained for the high-low junction. Using these conditions the voltage saturation effect has been discussed. It is shown that the saturation of voltage and consequently the saturation of surface-recombination velocity gives higher values of excess carrier-concentrations than obtained from the conventional theory. Thus excess charge storage is mainly of electrical origin and other physical effects like band gap narrowing may not be very significant. Calculations also give a diode ideality factor, m ≈ 1 even at high injection levels if the surface-recombination is large. For other cases, m varies between 1 and 2, if the voltage is corrected for the IR drop.
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