Abstract
The voltage-induced magnetization switching with the long tolerance of voltage-pulse duration (tp) is theoretically investigated. This method does not require the voltage-pulse to be turned off at around half-period of precessional motion of magnetization, and it can be realized by the energy dissipation through the damping torque. Numerical simulations show that this method is applicable in perpendicularly magnetized free layer at room temperature. The results provide a method for designing a voltage-controlled MRAM which ensures the reliability in writing against the distribution of tp from pulsed power supply and the distribution of precession periods among the MRAM cells.
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