Abstract
The development of high-density voltage-torque magnetoresistive random-access memory (MRAM) looks to voltage-induced magnetization switching (bit writing) without a biasing magnetic field---but how? In mainstream technology based on magnetic tunnel junctions (MTJs) with perpendicular magnetization, voltage-induced switching is not possible at zero bias. However, the authors show that switching at zero bias should be possible, in an MTJ with elliptical cross section and a conically magnetized free layer. Their results provide a practical guide to designing bias-field-free voltage-controlled MRAM.
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