Abstract
Epitaxial Be-doped GaAs thin films with hole concentrations of 3.0 × 10 cm−3 and 5.0 × 10 cm−3 were deposited on GaAs (001) substrates by solid-source molecular beam epitaxy. An energy gap of GaAs of 1.3 eV was observed by photoluminance. Devices fabricated by the thin films showed abrupt current-jumps and an Ohmic behavior indicating a metal-insulator transition after the jump. The current-jump voltage decreases as the temperature or the infrared intensity increases, which indicates that the devices can be used as a programmable critical temperature sensors.
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