Abstract
Measurements of the formative time delay tf at different working voltages U in argon at low pressure are presented. The well-known decreasing voltage behavior of the formative time delay is theoretically described by different empirical and semi-empirical models. In addition to the introduced empirical models, some models from the literature are applied to elucidate experimentally obtained tf (U) dependence. However, the models from the literature show a good agreement with the experimental data only at low overvoltages ?U(?U=U-Us where Us is the static breakdown voltage). Therefore, empirical corrections are made based on data analysis, and good compatibility is achieved in a whole range of working voltages.
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