Abstract
The research of determining the small signal equivalent circuit of the real space transfer (RST) transistor is investigated in this work. We propose a voltage-controlled mode model, called parameter extraction, to describe the performance of RST transistors at high frequency range. Besides, we also employ the value-determined model to simulate the microwave characteristics of RST and the theoretical and experimental results are compared. The influence of variables of RF performance is analyzed and theoretical results show that the cut-off frequency(fT)is mainly affected by the leakage resistances and the dimension of metal contact, but the maximum available gain frequencyfmax, is dependent on contact resistances.
Highlights
The real space transfer transistor is a three-terminal heterostructure device [1, 2] based on the real space transfer of hot electrons between two conducting layers and it is proposed by Kastalsky and Luryi [3]
The small signal equivalent circuit of RST transistor (RSTT) has been extracted from the measured S-parameters
In order to check up our fitting procedure, the value-determined small signal equivalent circuit is employed to simulate its high frequency characteristics by using the HP microwave design system (MDS) software [13] and the S-parameters computed from the equivalent circuit are compared with the measured S-parameters
Summary
The real space transfer transistor is a three-terminal heterostructure device [1, 2] based on the real space transfer of hot electrons between two conducting layers and it is proposed by Kastalsky and Luryi [3]. There are two operation modes in RST transistor, one is negative resistance field effect transistor (NERFET) and the other is charge injection transistor (CHINT). There are three terminals in CHINT, i.e., source, drain and collector. When applying a heating voltage between drain and source, the average energy in quantum well is enhanced and many hot electrons escaping over the internal barrier towards the collector. A GaAs=InGaAs=AlGaAs RST transistor (RSTT) is grown by MOCVD. InGaAs is chosen as the channel layer due to its high electron mobility, AlGaAs as the internal barrier layer and GaAs as the top layer. The influence of relative parameters is investigated by simulating the value-determined model
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