Abstract
In this paper, we describe a voltage-driven equivalent circuit of a nanowire memristor based on a metal oxide semiconductor field effect transistor (MOSFET) variable resistor for circuit simulation. The proposed model makes various hysteresis I-V (current−voltage) loops of the memristor based on the control voltage. The equivalent circuit is composed of two multipliers, several fixed resistors, three amplifiers, and a variable MOS resistor for slope control of the emulated memristor. The electric characteristics, such as the time waveform and the current−voltage curves, were examined by using the SPICE (simulation program with integrated circuit emphasis). We obtained many hysteresis I-V curves from the circuit model of the equivalent memristor. In addition, the circuit was experimentally implemented by using a hybrid electronic circuit on which measurements were taken. The simulated data and the measured results obtained through the time series waveforms and the current−voltage curve plots verified that the nonlinear dynamics of the nanowire memristor could be created and controlled by using a variable MOS resistor.
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