Abstract
In this study, we propose a silicon-based metal oxide semiconductor field effect transistor (MOSFET) device for p-type that can operate at a high temperature (at 573 K). This device can be applied to logic circuits, and furthermore, used in semiconductor chips operating in high temperature environments. Through research, we selected 3C-SiC, which can prevent off-current most effectively, as a material to be applied to the device. After that, technology computer aided design (TCAD) simulation will be used to apply the interface characteristics according to the physical properties of silicon and 3CSiC, and to optimize the current characteristics of device as a logic element. In addition, we investigated a complementary metal oxide semiconductor (CMOS) logic circuit with simulation program with integrated circuit emphasis (SPICE) and verify the inverting characteristics in a high temperature environment of 573 K by applying the device of this study.
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