Characterization and performance investigation of nanoscale MOSFETs

Abstract

A novel RF-MOSFET (Radio Frequency Metal Oxide Semiconductor Field Effect Transistor) model with PTM (Predictive technology model) for 90 nm CMOS (Complementary Metal Oxide Semiconductor) technology is presented. A simple and accuracy method is developed to directly extract all the high frequency parasitic effect from measured S-parameter biased at zero and linear region. This model is proposed to overcome some of short channel effects at nano-scale highly dopped drain and source based on the conventional small signal MOSFET (Metal Oxide Semiconductor Field Effect Transistor) equivalent circuit, RF (Radio Frequency) characterization of CMOS (Complementary Metal Oxide Semiconductor) has been taken up in terms of RF Figure of Merits. The excellent correspondence is achieved between simulated and measured S-parameter (Scattering parameter) from 1GHz to 10 GHz frequency range.