Abstract
In this work, we study the threshold switching and short-term memory plasticity of a Pt/HfO2/TaOx/TiN resistive memory device for a neuromorphic system. First, we verify the thickness and elemental characterization of the device stack through transmission electron microscopy (TEM) and an energy-dispersive X-ray spectroscopy (EDS) line scan. Volatile resistive switching with low compliance current is observed under the DC sweep in a positive bias. Uniform cell-to-cell and cycle-to-cycle DC I-V curves are achieved by means of a repetitive sweep. The mechanism of volatile switching is explained by the temporal generation of traps. Next, we initiate the accumulation of the conductance and a natural decrease in the current by controlling the interval time of the pulses. Finally, we conduct a neuromorphic simulation to calculate the pattern recognition accuracy. These results can be applicable to short-term memory applications such as temporal learning in a neuromorphic system.
Highlights
Resistive Switching Characteristics of Resistive-switching behaviors that are observed, including resistive switching randomaccess memory (RRAM) [1], phase-change random-access memory (PRAM) [2], and magnetic random-access memory (MRAM) [3], can be an important phenomenon in nonvolatile memory applications
A 7 nm thick HfO2 layer was deposited by the atomic layer deposition (ALD) technique on the TaOx layer
The polycrystalline TiN layer and the amorphous HfO2 and TaOx layers can be clearly observed in the transmission electron microscopy (TEM) image
Summary
Resistive Switching Characteristics of Resistive-switching behaviors that are observed, including resistive switching randomaccess memory (RRAM) [1], phase-change random-access memory (PRAM) [2], and magnetic random-access memory (MRAM) [3], can be an important phenomenon in nonvolatile memory applications. Resistive change switching of RRAM can be expanded in more directions depending on the type and operation method of the device stack. The type of switching can vary depending on whether or not electroforming is performed, as well as the limitation of the operating current [18]. A high current (milliampere) shows a strong non-volatile characteristic while a low current (microampere or less) shows a more volatile characteristic. Most previous papers have demonstrated current reduction (reset process) through the opposite sweep of the set process without strictly checking whether it is non-volatile or volatile at low currents [19,20]
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