Abstract
In this work, we observed the duality of threshold switching and non-volatile memory switching of Ag/SnOx/TiN memory devices by controlling the compliance current (CC) or pulse amplitude. The insulator thickness and chemical analysis of the device stack were confirmed by transmission electron microscope (TEM) images of the Ag/SnOx/TiN stack and X-ray photoelectron spectroscopy (XPS) of the SnOx film. The threshold switching was achieved at low CC (50 μA), showing volatile resistive switching. Optimal CC (5 mA) for bipolar resistive switching conditions with a gradual transition was also found. An unstable low-resistance state (LRS) and negative-set behavior were observed at CCs of 1 mA and 30 mA, respectively. We also demonstrated the pulse operation for volatile switching, set, reset processes, and negative-set behaviors by controlling pulse amplitude and polarity. Finally, the potentiation and depression characteristics were mimicked by multiple pulses, and MNIST pattern recognition was calculated using a neural network, including the conductance update for a hardware-based neuromorphic system.
Highlights
Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea; Department of Information and Communication Engineering, Dongguk University, Seoul 04620, Korea; Abstract: In this work, we observed the duality of threshold switching and non-volatile memory switching of Ag/SnOx /TiN memory devices by controlling the compliance current (CC) or pulse amplitude
In magnetic memory (MRAM) [7], the resistance state is changed as the magnetization direction is changed by the electric field
In resistive memory (RRAM) [1,2,3,4], the resistance state can be tunable by the electric field or joule heating
Summary
Oxygen vacancy formation in the dielectric can make a conducting filament by the oxygen movement under the electric field [22,23] When metal oxides such as TaOx and HfO2 are used for the resistive switching layer, very uniform and excellent endurance and retention properties have been reported [22,23]. The operating current is greatly affected by the cell area [24,25] It has a relatively good variation of resistance states, but it has disadvantages such as a long switching time and poor retention characteristics. Oxide semiconductors such as In-Ga-Zn-O (IGZO) [36,37] and ZnO [38,39,40] provide gradual conductance modulation, whose property is favorable to implement the neuromorphic system as the synaptic device
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