Abstract
We utilized cyclopentadienylallylnickel, CpAllylNi, as a precursor for chemical vapor deposition (CVD). CpAllylNi is a liquid at 10 °C, and it has a high vapor pressure, 10 Torr at 73 °C. Thermal gravimetry differential thermal analysis indicated that the decomposition occurred slightly below 200 °C. CpAllylNi decomposed, generating several gases, of which content was more than those of other cyclopentadienyl Ni precursors. In a CVD CpAllylNi/H 2 gas supply system, the other cyclopentadienyl Ni precursor characteristics contributed to a high deposition rate with low residual carbon at low temperature, 13 nm/min, 4% carbon, and 120 °C, respectively. The low temperature was caused by interactions of CpAllylNi and H 2. CpAllylNi was superior to MeCp 2Ni with respect to volatility and leaving residual carbon in the deposited film. Therefore, CpAllylNi is one of the best precursor candidates for depositing Ni thin films with low carbon impurity by low-pressure CVD.
Published Version
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