Volatile CuOH as a precursor for the growth of CuO nanowires

Abstract

Graphical abstractDisplay Omitted Highlights? We thermochemically asses the dominant vapors present during CuO nanowire growth. ? A significant CuOH partial pressure exists at the Cu-Cu2O interface and is likely to be the transport precursor. ? This assessment is likely to be valid for other metal-oxide systems that also produce volatile hydroxides. A volatile vapor mediated mechanism for the growth of CuO nanowires grown at high temperatures under atmospheric conditions has been mostly disregarded in the literature since partial pressures are calculated to be less than required to sustain growth. In this study, we apply a simple kinetic theory to ascertain the critical partial pressure of volatile species required to support vapor mediated nanowire growth and show that this value can be met from a volatile hydroxide species. Although only the Cu-O system is examined, this assessment is likely to be valid for other metal-oxide systems that form volatile hydroxides and exhibit nanowire growth.