Abstract

With scaling of nano-interconnect linewidth toward a 3 nm technology node, electromigration in copper nano-interconnects is becoming a major limitation. In this context, the increase of texture polycrystallinity plays a major role and necessitates better understanding of the impact of void dynamics and its interaction with texture at operating conditions. To this end, comprehensive, yet efficient, physics-based numerical models are warranted given that electromigration experiments at low operating temperatures are not feasible. Albeit, development of such models has been a challenge since it involves large length-scale discrepancy between features, i.e., from wire dimensions (hundreds of micrometers) down to grains and voids (tens of nano-meters and below) leading to substantial computational cost. To this end, in this study an efficient multi-scale physics-based electromigration modeling approach is demonstrated, where an experimentally calibrated Korhonen-type 1D model solves electromigration at the global scale (entire interconnect), and a 2D local model simulates void dynamics considering the impact of electron wind, void surface energy, and stress gradients. The role of copper texture, i.e., grain boundaries, grain orientation and anisotropic properties is thoroughly investigated. We demonstrate that by tailoring the copper grain structure, void behavior and thus resistance evolution of nanowires can be effectively controlled. Compared to wider interconnects, in scaled nanowires, surface energy is found to play a dominant role on void morphology compared to electron wind. Strong anisotropy of diffusivity of copper's FCC lattice fosters faceted morphologies and emergence of slit morphology during void transition through the polycrystalline texture. Bamboo segments are shown to effectively pin the voids migrating toward the cathode in cases with cobalt cap. In addition, voids migrating from low diffusivity to high diffusivity regions adopt a longitudinally elongated morphology, which can be detrimental in a down-stream operation mode.

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