VLSI compatible parallel fabrication of scalable few electron silicon quantum dots

Abstract

144 highly tuneable high density lithographically defined Si double quantum dots (DQDs) are fabricated for the first time in parallel via a scalable VLSI compatible fabrication process for the realisation of single electron qubits for quantum computing. 25 nm DQDs with less than 5 nm in dimensional variation are achieved via the use of Hydrogen silsesquioxane resist and electron beam lithography. Repeatable coulomb oscillations and coulomb diamonds signifying single electron tunneling are observed in the electrical characteristics of a Si DQD structure. This demonstrates the viability and dimensionality of our system and paves the way for single electron spin manipulation in scalable Si based systems.