Abstract
Cathodoluminescence (CL) emission from the InGaN multi-quantum well structure was analyzed using transmission electron microscopy-CL. The CL panchromatic images indicated the light emission intensity from the InGaN active layers was inhomogeneous. Hyper-spectral image analysis of the CL signals revealed the wavelength of the emitted light was non-uniform in the active layers, which is the origin of the light emission inhomogeneity. The band gap energy plot constructed from the wavelength analysis visualized energy hump regions, where the carriers were preferentially localized and recombined to emit light.
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