Abstract
We present a method for designing quantum light sources, emitting in the visible band, using wurtzite InxGa1−xN quantum dots (QDs) in a GaN matrix. This system is significantly more versatile than previously proposed arsenide- and phosphide-based QDs, having a tuning range exceeding 1 eV. The quantum mechanical configuration interaction method, capturing the fermionic nature of electrons and associated quantum effects explicitly, is used to find shapes and compositions of dots to maximize the excitonic dipole matrix element and optimize the biexciton binding energy. These results provide QD morphologies tailored for either bright single-photon emission or entangled- photon-pair emission at any given wavelength in the visible spectrum.
Highlights
GaN wurtzite quantum dots (QDs) could provide versatility not afforded by other material systems, helping to target new applications of quantum photonics
We present a method for designing quantum light sources, emitting in the visible band, using wurtzite InxGa1−xN quantum dots (QDs) in a GaN matrix
Excitons in nitride quantum dots have large emission energies, unlocking the blue and ultraviolet spectral regions for quantum light sources (QLS) that have been inaccessible to common III−V zinc-blende compatible technologies
Summary
Visible spectrumquantum lig h t so urcesbasedon InxG a 1– xN/GaN Quantum Dots To mic, S, P al, J, Mi glio r a t o, MA, Youn g, RJ a n d Vuk mi r ovi ć, N. This version is available at: h t t p :// u sir.s alfo r d. USIR is a digital collection of the research output of the University of Salford. Full text m aterial held in the repository is m ade freely available online and can be read, downloaded and copied for noncommercial private study or research purposes.
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