Growth of In xGa 1−xN quantum dots by nitridation of nano-alloyed droplet method using MOCVD

Abstract

In x Ga 1− x N quantum dots (QDs) were grown on GaN/sapphire (0 0 0 1) substrates by employing nitridation of nano-alloyed droplet (NNAD) method using metal-organic chemical vapor deposition (MOCVD). In+Ga alloy droplets were initially formed by flowing the precursors TMIn and TMGa. Density of the In+Ga alloy droplets was increased with increasing precursors flow rate; however, the droplet size was scarcely changed in the range of about 100–200 nm. Two cases of In x Ga 1− x N QDs growth were investigated by varying the nitridation time and the growth temperature. It was observed that the In x Ga 1− x N QDs size can be easily changed by controlling the nitridation process at the temperature between 680 and 700 °C for the time of 5–30 min. Self-assembled In x Ga 1− x N QDs were successfully grown by employing NNAD method.