Visible red light emission from Eu‐doped GaN quantum dots grown by plasma‐assisted MBE

Abstract

We demonstrate the growth of GaN quantum dots doped with Eu by plasma-assisted MBE. Intense emission from the intra-atomic 4f transition of Eu3+ was observed at 622 nm. GaN quantum dots (QDs) doped with 1% Eu showed the maximum emission. The full-width at half maximum (FWHM) of the CL spectrum of Eu-doped GaN QDs was 2.1 nm at room temperature. Eu doping increased the size of QDs by 4 times and decreased the density of QDs by one order of magnitude. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)