Abstract
Abstract The work describes basic photoluminescence (PL) and electroluminescence (EL) properties of wide-bandgap (2.0 eV or greater) hydrogenated amorphous silicon (a-Si: H). Thin films of wide-bandgap (high-hydrogen-content) a-Si: H were prepared by microwave electron cyclotron resonance plasma-enhanced chemical vapour deposition from SiH4 under high dilution with He. The films exhibit spectrally broad (full width at half-maximum, 0.4 eV or greater) visible PL at room temperature, peaked at about 1.5eV. On the basis of measurements of the PL temperature dependence, PL dynamics, infrared absorption spectra, picosecond pump-and-probe experiments and hydrogen thermal desorption spectroscopy the dominant microscopic mechanism of visible PL has been revealed to be the radiative de-excitation of oligosilane (-(SiH2)2-) units or of a specific defect in their close vicinity. EL has been investigated in sandwich p+[sbnd]i[sbnd]n+ and p+[sbnd]p[sbnd]n[sbnd]n+ structures with (Cr[sbnd]Ni)/indium tin oxide contacts....
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