Abstract
We investigate hydrogenated amorphous silicon (a-Si:H) from the point of view of light emitting applications. Thin films of wide band gap a-Si:H were prepared from silane SiH 4 diluted with He by using the microwave electron cyclotron resonance plasma enhanced chemical vapour deposition. Room temperature photoluminescence (PL) and mainly electroluminescence (EL) of p +–i–n + (p +–p–n–n +) structures were studied. The PL and EL emission spectra are in the red/near-infrared region. EL, occuring in fact in recrystallised parts of the devices (the crystallisation arising as a result of the application of an external bias), has hysteresis and the EL devices evoke the a-Si:H memory switches.
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