Abstract
Visible photo- (PL) and electroluminescence (EL) were observed at room temperature from nanocrystalline Si (nc-Si) thin film; nc-Si was electrochemically formed in HF aqueous solution from boron doped microcrystalline Si (μc-Si) deposited by a rf plasma chemical vapor deposition method on a glass substrate with a SnO2 transparent conductive layer. From the scanning electron microscope images, the ‘‘pore’’ structure is not found on the surface of the nc-Si thin film. PL occurs with a broadband spectrum peaking at an energy around 1.7 eV and its spectral shape resembles that of conventional porous Si made from a crystalline Si substrate. The dependence of PL intensity on crystalline volume fraction in μc-Si implies that the quantum size effects operate in the emission process in nc-Si. Visible EL emission was observed in a p-i-n heterostructured diode consisting of the nc-Si and amorphous layers with the spectral peak energy of 1.8 eV.
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