Abstract
Demonstrated is advanced device and packaging architecture of visible GaN-based light-emitting diodes (LEDs) combining thin-film flip-chip devices and wafer-level chip-scale package with through-silicon-via (TSV) and wafer-to-wafer alignment bonding. In addition, a new interconnect technique for LEDs is introduced using an anisotropic conductive film with metal balls. Thermal rollover in light output versus current characteristics is not observed up to 700 mA. A forward voltage at 350 mA is 3.06 V. The architecture can facilitate excellent heat removal through a TSV-formed Si wafer in addition to expected benefits of easy integration of Si-based devices in lighting modules. Light-output power at 350 mA increases by 11.1% compared with that of conventional flip-chip LEDs. A Lambertian-like emission pattern is also achieved.
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