Abstract
The recognition, memory, and processing of light information are an important link in the development of artificial vision system. However, the traditional image recognition and memory unit of artificial vision systems need a complex circuit structure, which brings great challenges to the development of artificial vision. In this work, a CeOx/ZnO structure optoelectronic memristor based on a simple two-terminal structure was prepared. Through optical and electrical tests, 405 nm visible light recognition, storage, and processing were achieved, and at the same time, the response current has been greatly improved. And the response of 405 nm visible light was verified by using simulating memristor array, indicating potential application in the artificial vision system. Finally, the physical conduction mechanism of the device is explained combining with the adjustment of the height of the CeOx/ZnO interface barrier by photo-generated carriers. It provides an important reference for the simplification of the artificial vision system circuit structure in the future.
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