Abstract
Ultralong MnOx nanorods are synthesized using hydrothermal method. Lateral device of Ag|MnOx|Ag is fabricated using single MnOx nanorod with length of ∼20 μm and diameter of ∼120 nm. The device shows a typical resistor feature under dark, while it transfers from the resistor to a memristor under visible light. Our device gives evidence that the resistive switching (RS) memory behavior is feasible in microscale materials under visible light illumination. The RS behaviors are mainly dominated by the reaction, redistribution and migration of chemisorbed oxygen (Oxads−) of the MnOx surface. This work provides an insight into the physical mechanism of memristive system as well as memristor-based photodetector application.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
