Abstract
Even though the great interest in studying the near-infrared light emission due to Er3+ ions for telecommunication purposes, efficient visible radiation can be achieved from many different rare-earth (RE) ions. In fact, visible and/or near-infrared light emission takes place in RE-doped wide bandgap semiconductors following either photon or electron excitation, suggesting their technological potential in devices such as light-emitting diodes (LED's) and flat-panel displays, for example. Taking into consideration these aspects, the present contribution reports on the investigation of AlN, BeN, GeN, and SiN thin films doped with samarium. The samples were prepared by sputtering and as a result of the deposition method and conditions they present an amorphous structure and Sm concentrations in the low 0.5 at. %. After deposition, the samples were submitted to thermal annealing treatments and investigated by different spectroscopic techniques. A detailed examination of the experimental data allowed to identify optical transitions due to Sm3+ and Sm2+ ions as well as differences in their mechanisms of photon excitation and recombination. Moreover, it is shown that the Sm-related spectral features and emission intensity are susceptible, respectively, to the atomic environment the Sm3+/Sm2+ ions experience and to the presence of non-radiative recombination centers.
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