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https://doi.org/10.1049/el:19930222
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Cite Journal: Electronics Letters |  Publication Date: Feb 18, 1993 |
 Citations: 19 |
The demonstration of the first visible resonant cavity light-emitting diodes (RCLEDs) is reported. The devices consist of an InAlGaP strained quantum well active region surrounded by AlAs/AlGaAs distributed Bragg reflectors. Linewidths from 0.9 nm (2.6 meV) to 45 nm (12.8 meV) were obtained by varying the cavity quality factor (Q).
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