Abstract
The realization of self-powered and wide-band detection functions through a single photodetector is an important development direction for the next generation of photodetectors. Here, the CuI/MoS2 heterojunction photodetectors constructed by combining dry and wet transfer techniques has achieved self-powered and wide-band detection. Under 405 nm illumination, CuI/MoS2 heterojunction PDs achieved an open circuit voltage of 90mV and a short-circuit current of 4.869 nA, and in self-powered operation mode, the responsivity can reach 386 mA/W. In addition, within the testing wavelength range of 405 nm to 1010 nm, the responsivity of CuI/MoS2 heterojunction photodetectors is significantly better than that of a single MoS2 photodetectors, with a 3.35-fold boost in responsivity at the highest value. These results indicate that CuI/MoS2 heterojunction photodetectors have better wide-band response in the visible and near-infrared spectral ranges. Moreover, we have developed a signal recognition system to demonstrate the wide-band imaging capability of photodetectors. This work reveals the strong potential of CuI/MoS2 heterojunction photodetectors in the fields of self-powered and wide-band optoelectronic detection.
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