Abstract

The process of pattern transfer of desired topological integrated circuits features into silicon or other semiconductor compounds plays a critical role for the production of microelectronic and photonic devices, and micro- and nanoelectromechanical systems. Any deviation from the desired shape of the pattern limits density, yield, and reliability of these devices. Gas reactivity, pressure, ion, electron, and reactant transport to the surface, and product transport away from the surface, have been identified as important issues that control the microscopic uniformity in high aspect ratio etching. A plasma etching simulation software, containing corresponding physical models, can be used to establish a link between etch process parameters such as pressure, rf power, etching gas chemistry, temperature, and the physical and chemical process parameters like energy and angular distribution of ions and neutrals, radical sticking, and surface charging. ViPER (Virtual Plasma Etch Reactor) is a full featured plasma processing simulation software developed at Ilmenau University of Technology, Department of Microelectronic and Nanoelectronic Systems (MNES) [ http://www.tu-ilmenau.de/en/mne-mns/research/plasma-etching/viper-download ]. The simulator allows a deep analysis of the most significant effects like reactive ion etching lag, charging, notching, bowing, faceting, microtrenching, profile shape dependence, and gives more insight into the physical phenomena occurring in the plasma reactor during plasma etching process, helping engineers to understand how plasma etching works.

Full Text
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