Abstract
We study the growth of GaN and (In,Ga)N/GaN multiple quantum wells on γ-LiAlO2 by rf plasma-assisted molecular beam epitaxy. The GaN layers exhibit promising optical and electrical properties, whereas the structural quality is significantly influenced by inferior substrate morphology. The (In,Ga)N/GaN multiple quantum well structures show intense room-temperature photoluminescence in the violet and blue spectral range.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
