Vicinal (111) surfaces at Si solid-liquid interface during unidirectional solidification

Abstract

The solid-liquid interfaces of silicon grains have been observed by an in-situ system. Two silicon seeds having different crystallographic orientations (as ⟨100⟩, ⟨110⟩, and ⟨111⟩) along the growth direction were placed side by side in a silica crucible for the direct comparison of interface behavior during the melt-growth process. Experimental evidence proved the existence of flat {111} surfaces at different grain orientations during crystallization. The difference in the interface positions of the two grains was used to calculate the undercooling of the {111} surfaces. The growth rate-undercooling relationship was linear in all experiments, showing that the observed flat surfaces were planes vicinal to {111} facets, growing through a step flow mode. The terrace length was constant but different from one experiment to another. Therefore, this work indicates that it is crucial to consider the vicinal surface kinetics in the analysis of Si facet planes and grooves during the melt-growth process.