Abstract
Two sharp vibrational absorption lines at 3079.2 and 983.3 cm −1 are investigated, occurring in semi-insulating LEC-grown GaAs with their intensities strictly correlated. After doping with deuterium, two additional correlated lines appear at 2288.3 and 729.1 cm −1. These lines are due to the stretching and wagging mode of a single hydrogen (or deuterium) atom bonded to a light impurity atom, most probably oxygen. Illumination with sub-band gap light at T<100 K results in a decrease of the intensity of the four lines and the simultaneous appearance of four new ones. This effect is explained as due to the recharging of the hydrogen centre by capturing photogenerated holes. The centre forms an electronic level in the gap between E v and about E v+0.5 eV.
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