Abstract
In LEC-grown GaAs and GaP with an oxygen content larger than 1015 cm—3, two sharp vibrational absorption lines are investigated located at 3108.0 as well as 3235.0 cm—1 for GaAs and 3106.0 as well as 3250.9 cm—1 for GaP. These lines are due to the stretching modes of hydrogen bonded to interstitial oxygen in two different centres (Oi–H)I and (Oi–H)II as proved by the detection of the isotopically shifted lines in material doped additionally with deuterium. Centre (Oi–H)I is a single hydrogen atom bonded to oxygen and is in GaAs photosensitive at temperatures lower than 100 K. (Oi–H)II is a di-hydrogen centre with the two hydrogen atoms being on equivalent positions around O.
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