Abstract
Atomic complexes formed by silicon, hydrogen, and phosphorus in crystalline silicon have been studied by using the pseudopotential-density-functional method in a supercell approach. The bending and the stretching H mode energies have been estimated for the stable and the metastable sites of the H atom. Their values for the stable H site (i.e., the antibonding silicon one) are in very good agreement with those of two infrared-absorption lines.
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