Abstract
The formation process of the boron- and oxygen-related defect complex in crystalline silicon, responsible for the performance degradation of solar cells made on boron-doped Czochralski silicon (Cz–Si), is investigated on Cz–Si solar cells as a function of the applied voltage in the dark at temperatures ranging from 298 to 373 K. We show that the defect formation is not only a consequence of illumination or the application of a forward bias voltage but also occurs under equilibrium conditions at elevated temperatures in the dark. It can be partly suppressed by applying a reverse voltage. Our findings provide clear experimental evidence that a recombination-enhanced mechanism correlated with the total recombination rate is the driving force of the formation of the metastable defect.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.