Abstract
Data are presented characterizing very small oxide aperture vertical-cavity surface-emitting lasers with a 0.5-μm-thick bulk GaAs active region. The transverse far field is independent of the aperture size for diameters ⩽3 μm, although threshold reduction occurs with reducing aperture size down to ∼0.5 μm diam. Threshold reduction is attributed to improved overlap between the optical mode and gain profile. The large signal temporal response is characterized using optical gain switching.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
