Abstract
Application of the hydride growth process at overall pressures below 5×103 Pa yields very high rates of deposition for binary (GaAs, InP) and ternary (GaInAs, GaAsP) III-V semiconductor films. It is proposed that at these conditions the hydrides AsH 3 and PH 3 reach the substrate surface undecomposed and react directly with the group III chloride (GaCl, InCl). The rates can be convenently adjusted over a wide range by varying the reactant pressures. Films of excellent morphology with low background doping, high electron mobilities and well resolved PL spectra were obtained.
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