Abstract
Nearly lattice-matched and unintentionally doped AlInN films with low background doping grown via metalorganic vapor phase epitaxy on GaN/sapphire are investigated. The lattice-matched condition is verified with x-ray diffraction (XRD), and the films exhibit typical morphological characteristics for AlInN. The optical constants (nr &k) and thicknesses of the AlInN films are determined via spectroscopic ellipsometry, finding an nr ~ 2.2 at 500 nm and a bandgap of ~4.366 eV. Temperature-dependent Hall measurements in the Van der Pauw configuration are performed for temperatures from 80 K up to 350 K, and a low background doping concentration (n ~ 3 × 1017 cm−3) and high electron mobility (μe ~ 320 cm2/V∙s) are found at room temperature. Simulations are performed to determine the influence of the 2-D electron gas (2DEG) caused by polarization fields from the GaN/AlInN interface and validate the Hall measurements. Thus, this work shows the potential of achieving high-quality AlInN films with low background doping densities for use in power electronic devices and deep-ultraviolet light-emitting diodes.
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