Abstract
Very highly efficient GaAs–AlGaAs GRIN–SCH lasers were grown on an n-GaAs substrate as well as on a semi-insulating GaAs substrate by MBE. The threshold current density Jth of the lasers was found to be minimum when the thickness of the GaAs quantum well active layer is 6 nm. The lowest Jth of 260 A/cm2 was achieved for the broad-area Fabry–Perot laser (the Al composition of the cladding layer x=0.7, the cavity length L=400 μm). A ridge-waveguide (5 μm wide stripe) GaAs–AlGaAs GRIN–SCH laser, which is monolithically integrated with GaAs MESFET’s on a semi-insulating GaAs substrate, exhibited cw operation with a threshold current as low as 19 mA at room temperature.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
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