Abstract
GaInAs/AlGaInAs/InP separate-confinement heterostructure multiquantum well(SCH-MQW) laser diodes emitting at 1.55μm have been fabricated by atmospheric-pressure MOCVD. Room-temperature pulsed threshold current densities were 940Acm−2 and 830Acm−2 for 500μm and 800μm-long cavities, respectively. These are the lowest values reported to date for long wavelength MQW laser operation.
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