Abstract
We report residual resistivity ratio (RRR) values (up to RRR-541) measured in thin filmNb grown on MgO crystal substrates, using a vacuum arc discharge, whose 60–160 eVNb ions drive heteroepitaxial crystal growth. The RRR depends strongly uponsubstrate annealing and deposition temperatures. X-ray diffraction spectra andpole figures reveal that, as the crystal structure of the Nb film becomes moreordered, RRR increases, consistent with fewer defects or impurities in the latticeand hence longer electron mean free path. A transition from Nb(110) to purelyNb(100) crystal orientation on the MgO(100) lattice occurs at higher temperature.
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