Abstract
In this study, molybdenum disulfide (MoS2) film samples were prepared at different temperatures and annealed through magnetron sputtering technology. The surface morphology, crystal structure, bonding structure, and optical properties of the samples were characterized and analyzed. The surface of the MoS2 films prepared by radio frequency magnetron sputtering is tightly coupled and well crystallized, the density of the films decreases, and their voids and grain size increase with the increase in deposition temperature. The higher the deposition temperature is, the more stable the MoS2 films deposited will be, and the 200 °C deposition temperature is an inflection point of the film stability. Annealing temperature affects the structure of the films, which is mainly related to sulfur and the growth mechanism of the films. Further research shows that the optical band gaps of the films deposited at different temperatures range from 0.92 eV to 1.15 eV, showing semiconductor bandgap characteristics. The optical band gap of the films deposited at 200 °C is slightly reduced after annealing in the range of 0.71–0.91 eV. After annealing, the optical band gap of the films decreases because of the two exciton peaks generated by the K point in the Brillouin zone of MoS2. The blue shift of the K point in the Brillouin zone causes a certain change in the optical band gap of the films.
Highlights
Molybdenum disulfide (MoS2 ) has a unique layered structure that is composed of S–Mo–S layers with covalent bonds and hexagonal coordination
The MoS2 films prepared under the conditions of 100 ◦ C, 200 ◦ C, and 300 ◦ C show a “stripe” crystalline distribution (as shown by the conditions of 100 °C, 200 °C, and 300 °C show a “stripe” crystalline distribution, and the structural characteristics become evident with the increase in yellow circle in Figure 1e), and the structural characteristics become evident with the increase in temperature
The MoS2 film samples were prepared through magnetron sputtering and annealed
Summary
Molybdenum disulfide (MoS2 ) has a unique layered structure that is composed of S–Mo–S layers with covalent bonds and hexagonal coordination. MoS2 has many excellent properties and has been widely used in many fields, such as desulfurization [3,4], low consumption film transistors [5,6], and solid lubricants [7,8], because of its unique structure and is a 2D material with Dirac cone structure [9,10]. MoS2 film materials have excellent electrical and optical characteristics [11]. The films are annealed or combined with other materials, such as silicon carbide crystals, thereby effectively improving their electrical properties [12,13,14,15]. Studying the structure and performance of MoS2 films is or great practical significance
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