Abstract
A vertical‐type blue light‐emitting diode (BLED) was fabricated without a conventional substrate by the mixed‐source hydride vapor phase epitaxy (HVPE) method, wherein the reactor was equipped with a multi‐graphite boat filled with the mixed source for consecutive growth and regulation of the growth rate inside the source zone and a radio‐frequency (RF) heating‐coil to attain high temperatures (T > 900 °C) outside the source zone, which is different from the existing HVPE equipment. The vertical‐type BLED with an active layer of GaN was fabricated by only four production steps: i) photolithography process for manufacturing the mask, ii) epitaxial layer growth process for consecutive growth using the multi‐graphite boat, iii) sorting process to place the bare chips into the holes in a pocket‐type shadow mask for the deposition of the electrodes, and iv) metallization process. The characteristics of the emitted light and the growth thickness measured by a field emission scanning electron microscope (FE‐SEM) and a transmission electron microscope (TEM) revealed that we succeeded in producing the vertical‐type BLED by the mixed‐source HVPE method.
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