Vertically stacked microscale organic nonvolatile memory devices toward three-dimensional high integration

Abstract

In this study, vertically stacked microscale organic resistive nonvolatile memory devices are demonstrated. The fabricated devices consisted of vertically stacked two layers of 32×32 crossbar-structured organic memory devices (total of 2048 memory cells) with a memory-cell size of 7×7μm2 on a SiO2 substrate. The microscale organic memory devices were made using an orthogonal photolithography technique with a highly fluorinated photoresist and development solvent. The vertically stacked microscale organic memory devices showed reproducibility with good endurance, and stability and long retention times (over 104s) for both layers. The realization of vertical stacking of microscale organic memory devices might enable the production of organic memory devices toward the three-dimensional integration of organic electronic devices.