Abstract
In this paper, we report on vertically scaled GaN/AIN DH-HEMTs with regrown n+GaN ohmic contacts by MBE. Our conventional AlGaN barrier was replaced with an AlN barrier, greatly reducing the barrier thickness while maintaining a high carrier density. A selective-area MBE regrowth of an n+GaN ohmic contact layer significantly reduced access resistance. The 60 nm device exhibited a low R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> of 0.81Ω·mm with a record transconductance (gm) of 850 mS/mm, an <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ft</i> , of 156 GHz, and an <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">fmax</i> of 282 GHz.
Published Version
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